C1213 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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C1213

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC1213 TRANSISTOR (NPN)

FEATURES

z Low Frequency Amplifier

z Complementary Pair With 2SA673

TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

35

35

4

0.5

400

312

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

Test conditions

IC= 0.01mA,IE=0

IC=1mA,IB=0

IE=0.01mA,IC=0

VCB=20V,IE=0

VEB=3V,IC=0

VCE=3V, IC=10mA

VCE=3V, IC=500mA

IC=150mA,IB=15mA

VCE=3V, IC=10mA

Min Typ Max Unit

35

V

35

V

4

V

0.5

μA

0.1

μA

60

320

10

0.6

V

0.75

V

CLASSIFICATION OF hFE(1)

RANK

B

RANGE

60-120

C

100-200

D

160-320

www.cj-elec.com

1

C,Dec,2015

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