IL766-1(1999) 데이터 시트보기 (PDF) - Infineon Technologies
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IL766-1 Datasheet PDF : 3 Pages
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SINGLE CHANNEL IL766
DUAL CHANNEL ILD766
Bidirectional Input
Darlington Optocoupler
FEATURES
• Internal RBE for Better Stability
• High Current Transfer Ratios, VCE=5.0 V
IL/ILD766-1: 500% at IF=2.0 mA
IL/ILD766-2: 500% at IF=1.0 mA
• BVCEO >60 V
• AC or Polarity Insensitive Inputs
• Built-In Reverse Polarity Input Protection
• Industry Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The IL/ILD766 are bidirectional input optically cou-
pled isolators. They consist of two Gallium Ars-
enide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
The IL766 are single channel optocouplers. The
ILD766 has two isolated channels in a single DIP
package. They are designed for applications
requiring detection or monitoring of AC signals.
Maximum Ratings
Emitter (Each Channel)
Continuous Forward Current......................... 60 mA
Power Dissipation at 25°C
Single Channel ....................................... 200 mW
Dual Channel............................................ 90 mW
Derate Linearly from 25°C
Single Channel ................................... 2.6 mW/°C
Dual Channel...................................... 1.2 mW/°C
Detector (Each Channel)
Collector-Emitter Breakdown Voltage ............. 60 V
Collector-Base Breakdown Voltage ................ 70 V
Power Dissipation at 25°C ......................... 100 mW
Derate Linearly from 25°C .................. 1.33 mW/°C
Package
Isolation Test Voltage
(t=1.0 sec.) ..................... 7500 VACPK/5300 VRMS
Isolation Resistance
TA=25°C ................................................. ≥1012 Ω
TA=100°C ............................................... ≥1011 Ω
Total Power Dissipation at TA=25°C
(LED Plus Detector)
Single Channel ....................................... 250 mW
Dual Channel.......................................... 400 mW
Derate Linearly from 25°C
Single Channel ................................... 3.3 mW/°C
Dual Channel .................................... 5.3 mW/°C
Creepage ............................................ 7.0 mm min.
Clearance ........................................... 7.0 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ......................... 175
Storage Temperature ................... –55°C to +150°C
Operating Temperature................ –55°C to +100°C
Lead Soldering Time at 260°C.................... 10 sec.
Dimensions in inches (mm)
Single Channel
321
.248 (6.30)
.256 (6.50)
pin one ID
Anode/
Cathode
1
Cathode/
Anode
2
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Dual Channel
4 56
NC 3
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
pin one ID
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
4 321
Anode 1
.255 (6.48)
.268 (6.81)
.030 (0.76)
.045 (1.14)
4° typ.
5 678
.379 (9.63)
.390 (9.91)
Cathode 2
Cathode 3
Anode 4
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
8 Emitter
7 Collector
6 Collector
5 Emitter
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Electrical Characteristics TA=25°C
Parameter
Sym Min Typ Max Unit Condition
Emitter
Forward Voltage
Detector
VF
— 1.2 1.5 V
IF=±10 mA
Breakdown Voltage,
Collector-Emitter
Collector-Base
Leakage Current,
Collector-Emitter
—
BVCEO 60 75
BVCBO 60 90
V
IC=1.0 mA
V
IC=10 µA
ICEO — 10 100 nA VCE=10 V
Package
Saturation Voltage,
Collector-Emitter
VCEsat — — 1.0 V
DC Current Transfer Ratio CTR
——
IL766/ILD766-1
500
%
IL766-2
500
%
Rise Time, Fall Time
—
— 100 — µs
IF=±10 mA
IC=10 mA
VCE=5.0 V
IF=±2.0 mA
IF=±1.0 mA
VCC=10 V
IF=±2.0 mA
RL=100 Ω
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 29, 1999
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