ZTX605 데이터 시트보기 (PDF) - Zetex => Diodes

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ZTX605

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Zetex => Diodes 

ZTX604

ZTX605

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX604

ZTX605 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static Forward

hFE

Current Transfer Ratio

Transition Frequency fT

2K

5K

2K

0.5K

150

2K

5K

100K 2K

0.5K

150

100K

MHz

IC=50mA, VCE=5V

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

IC=100mA, VCE=10V

f=20MHz

Input Capacitance

Cibo

90 Typical

pF

Output Capacitance Cobo

15 Typical

pF

Switching Times

ton

0.5 Typical

µs

toff

1.6 Typical

µs

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

VEB=500mV, f=1MHz

VCB=10V, f=1MHz

IC=500mA, VCE=10V

IB1=IB2=0.5mA

1.0

R5 = 1MΩ

0.8 R5 = ∞

R5 = 100KΩ

R5 = 20KΩ

0.6

DC Conditions

0.4

0.2

0

1

ZTX604

ZTX605

10

100

200

VCE - Collector-Emitter Voltage (Volts)

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using the

following equation

Power(max ) − Power(act)

Tamb (max ) =

0.0057

+25° C

Tamb(max)= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE

and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

3-213

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