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CM600DY-12NF Datasheet PDF : 4 Pages
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, TC´ = 89°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Emitter Surge Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
—
—
—
VISO
CM600DY-12NF
–40 to 150
–40 to 125
600
±20
600
1200*
600
1200*
1130
40
40
580
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
Gate Leakage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Total Gate Charge
QG
Emitter-Collector Voltage**
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 60mA, VCE = 10V
IC = 600A, VGE = 15V, Tj = 25°C
IC = 600A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 600A, VGE = 15V
IE = 600A, VGE = 0V
Min.
Typ.
Max. Units
—
—
1.0
mA
—
—
0.5
µA
5.0
6.0
7.5
Volts
—
1.7
2.2
Volts
—
1.7
—
Volts
—
2400
—
nC
—
—
2.6
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 300V, IC = 600A,
—
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 4.2Ω,
—
Time
Fall Time
tf
Inductive Load
—
Diode Reverse Recovery Time**
trr
Switching Operation,
—
Diode Reverse Recovery Charge**
Qrr
IE = 600A
—
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC´ measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips.
—
90
nf
—
11.0 nf
—
3.6 nf
—
500
ns
—
300
ns
—
750
ns
—
300
ns
—
250
ns
8.7
—
µC
2
Rev. 09/09
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