HYB3164400AJ-40 데이터 시트보기 (PDF) - Infineon Technologies

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HYB3164400AJ-40

16M x 4-Bit Dynamic RAM (4k & 8k Refresh)

Infineon Technologies 

HYB3164(5)400AJ/AT(L)-40/-50/-60

16M x 4-DRAM

AC Characteristics (cont’d)(note: 6,7,8)

TA = 0 to 70 °C,VCC = 3.3 ± 0.3V

AC64-2F

Parameter

Symbol

-40

-50

-60

Unit Note

min. max. min. max. min. max.

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle tPRWC 60 –

71 –

80 –

ns

time

CAS precharge to WE

tCPWD 40

–

48 –

55 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

5

–

5

–

5

–

ns

CAS hold time

tCHR

5

–

5

–

10 –

ns

RAS to CAS precharge time

tRPC

0

–

0

–

0

–

ns

Write to RAS precharge time

tWRP

5

–

5

–

10 –

ns

Write hold time referenced to RAS tWRH 5

–

5

–

10 –

ns

Self Refresh Cycle (L-version only)

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100k –

75 –

-50 –

100k –

90 –

-50 –

100k –

110 –

-50 –

ns 17

ns 17

ns 17

Test Mode Cycle

Write command setup time

Write command hold time

tWTS

5

tWTH

5

Capacitance

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Input capacitance (A0 to A11,A12)

Input capacitance (RAS, CAS, WE, OE)

I/O capacitance (I/O1-I/O4)

–

5

–

5

–

–

5

–

5

–

Symbol

CI1

CI2

CIO

Limit Values

min.

max.

–

5

–

7

–

7

ns 18

ns 18

Unit

pF

pF

pF

Semiconductor Group

11

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