2N5660 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N5660 Datasheet PDF : 2 Pages
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2N5660
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min
Typ
Max Units
V(BR)CEO IC = 10 mA
200
Volts
V(BR)CER IC = 10 mA, RBE = 100 Ω
250
Volts
V(BR)EBO IE = 10 µA
6
Volts
ICBO1
ICBO2
ICES1
ICES2
VCB = 200 Volts
VCB = 250 Volts
VCE = 200 Volts
VCE = 200 Volts, TA = 150°C
0.1
µA
1.0
mA
0.2
µA
100
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 50 mA, VCE = 2 Volts
40
hFE2 IC = 500 mA, VCE = 5 Volts
40
hFE3 IC = 1 A, VCE = 5 Volts
15
hFE4 IC = 2 A, VCE = 5 Volts
5
hFE5 IC = 500 mA, VCE = 5 Volts
15
TA = -55°C
VBEsat1 IC = 1 A, IB = 100 mA
VBEsat2 IC = 2 A, IB = 400 mA
VCEsat1 IC = 1 A, IB = 100 mA
VCEsat2 IC = 2 A, IB = 400 mA
120
1.2
Volts
1.5
0.4
Volts
0.8
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 10 MHz
2
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
7
45
pF
Switching Characteristics
Parameter
Saturated Turn-On Time
Saturated Turn-Off Time
Symbol
Test Conditions
Min
Typ
Max Units
tON IC = 500 mA, VCC = 100 Volts
250
ns
tOFF IC = 500 mA, VCC = 100 Volts
850
ns
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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