SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD543/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-emitter
breakdown voltage
BD543A
BD543B
IC=30mA ;IB=0
BD543C
VCEsat-1
VCEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
IC=5A ;IB=1A
VCEsat-3 Collector-emitter saturation voltage
IC=8A ;IB=1.6A
VBE
ICEO
IEBO
hFE-1
hFE-2
Base-emitter on voltage
Collector
cut-off current
BD543/543A
BD543B/543C
Emitter cut-off current
DC current gain
DC current gain
IC=5A ; VCE=4V
VCE=30V;IB=0
VCE=60V;IB=0
VEB=5V; IC=0
IC=1A ; VCE=4V
IC=3A ; VCE=4V
hFE-3
DC current gain
IC=5A ; VCE=4V
Switching times
ton
Turn-on time
toff
Turn-off time
IC=6A;
IB1=-IB2=0.6A
RL=5>
MIN TYP. MAX UNIT
40
60
V
80
100
0.5
V
0.5
V
1
V
1.6
V
0.7
mA
1
mA
60
40
15
0.6
µs
1.0
µs
2