BD744A 데이터 시트보기 (PDF) - Power Innovations

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BD744A

PNP SILICON POWER TRANSISTORS

Power Innovations 

BD744, BD744A, BD744B, BD744C

PNP SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS638AA

VCE = -4 V

tp = 300 µs, duty cycle < 2%

TC = 125°C

TC = 25°C

TC = -55°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

-10

IC

IB

= 10

TCS638AB

tp = 300µs, duty cycle < 2%

-1·0

100

10

-0·1

-0·1

-1·0

-10

IC - Collector Current - A

Figure 1.

-100

-0·01

-0·1

TC = -55°C

TC = 25°C

TC = 125°C

-1·0

-10

-100

IC - Collector Current - A

Figure 2.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

-100

SAS638AA

tp = 1 ms,

d = 0.1 = 10%

tp = 10 ms,

d = 0.1 = 10%

-10

tp = 50 ms,

d = 0.1 = 10%

DC Operation

-1·0

-0·1

-0·01

-1·0

BD744

BD744A

BD744B

BD744C

-10

-100

VCE - Collector-Emitter Voltage - V

Figure 3.

-1000

PRODUCT INFORMATION

3

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