GS880E18BGT-150V 데이터 시트보기 (PDF) - Giga Semiconductor

부품명

상세내역

일치하는 목록

GS880E18BGT-150V

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

Simplified State Diagram with G

GS880E18/32/36BT-xxxV

X

Deselect

W

R

W

R

X

First Write R

CW

CR

W

First Read X

CW

CR

W

X

R

Burst Write

CR

CW

R

W

Burst Read X

CW

CR

Notes:

1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing

through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

Rev: 1.00 6/2006

11/23

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2006, GSI Technology

Share Link: