C4764 데이터 시트보기 (PDF) - New Jersey Semiconductor
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C4764 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 300mA ; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 4A; IB= 0.8A
VsE(sat) Base-Emitter Saturation Voltage
lc= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB=1500V;IE=0
IEBO
Emitter Cutoff Current
VEB= 5V ; lc= 0
hpE-1
DC Current Gain
lo=1A;VCE=5V.
hFE-2
DC Current Gain
VECF
C-E Diode Forward Voltage
lc=4A;VCE=5V
IF=4A
fi
Current-Gain—Bandwidth Product
lc=0.1A;VCE=10V
COB
Output Capacitance
!E=O ; VCB= 10V;ftest=1.0MHz
Switching times ;Resistive load
tstg
Storage Time
tf
Fall Time
IC=4A,IB1=0.8A;IB2=-1.6A
RL= 51 Q
2SC4764
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
1.0 mA
83
250 mA
8
5
9
1.8
V
1
3
MHz
170
pF
2.5 u s
0.2 u s
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