FQI12N50 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQI12N50 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
Bottom :
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
100
100
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.2
1.0
V = 10V
GS
0.8
V = 20V
GS
0.6
0.4
0.2
※ Note : T = 25℃
J
0.0
0
10
20
30
40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
Ciss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
Crss = Cgd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150℃
25℃
100
-55℃
10-1
0
※ Notes :
1.
2.
V25DS0μ=s50PVulse
Test
2
4
6
8
10
12
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
※ Note : I = 12.1 A
D
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002
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