KTC4372 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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KTC4372 Datasheet PDF : 4 Pages
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Production specification
Triple Diffused NPN Transistor
KTC4372
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector cut-off current
ICBO
VCB=200V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=5V,IC=10mA
70
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA
Base-emitter voltage
VBE
VCE=5V, IB= 30mA
0.1 μA
0.1 μA
240
0.5 V
1.0 V
Transition frequency
fT
VCE=30V, IC= 10mA
120
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
3.5 5.0 pF
CLASSIFICATION OF hFE
Rank
Range
MARKING
O
70-140
AO
Y
120-240
AY
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E124
Rev.A
www.gmicroelec.com
2
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