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IRFM054

N–CHANNEL POWER MOSFET

Semelab - > TT Electronics plc  

IRFM054

MECHANICAL DATA

Dimensions in mm (inches)

3.53 (0.139)

3.78 (0.149)

Dia.

13.59 (0.535)

13.84 (0.545)

6.32 (0.249)

6.60 (0.260)

1.02 (0.040)

1.27 (0.050)

123

3.81 (0.150)

BSC

0.89 (0.035)

1.14 (0.045)

3.81 (0.150)

BSC

TO–254AA – Metal Package

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

N–CHANNEL

POWER MOSFET

VDSS

ID(cont)

RDS(on)

60V

35A *

0.027Ω

FEATURES

• HERMETICALLY SEALED ISOLATED

PACKAGE

• AVALANCHE ENERGY RATING

• SIMPLE DRIVE REQUIREMENTS

• ALSO AVAILABLE IN TO–220 METAL AND

SURFACE MOUNT PACKAGES

• EASE OF PARALLELING

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VGS

Gate – Source Voltage

ID

Continuous Drain Current

(VGS = 10V , Tcase = 25°C)

ID

Continuous Drain Current

(VGS = 10V , Tcase = 100°C)

IDM

Pulsed Drain Current 1

PD

Power Dissipation @ Tcase = 25°C

Linear Derating Factor

±20V

35A*

35A

220A

150W

1.2W/°C

EAS

dv/dt

Single Pulse Avalanche Energy 2

Peak Diode Recovery 3

480mJ

4.5V/ns

TJ , Tstg

TL

RθJC

RθCS

RθJA

Operating and Storage Temperature Range

Lead Temperature measured 1/16” (1.6mm) from case for 10 sec.

Thermal Resistance Junction to Case

Thermal Resistance Case to Sink (Typical)

Thermal Resistance Junction to Ambient

–55 to 150°C

300°C

0.83°C/W

0.21°C/W

48°C/W

Notes

1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature

2) @ VDD = 25V , L ≥ 450µH , RG = 25Ω , Peak IL = 35A , Starting TJ = 25°C

3) @ ISD ≤ 35A , di/dt ≤ 200A/µs , VDD ≤ BVDSS , TJ ≤ 125°C , SUGGESTED RG = 2.35Ω

* ID Current limited by pin diameter.

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 11/94

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