P4C187-25LMB 데이터 시트보기 (PDF) - Semiconductor Corporation

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P4C187-25LMB

ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS

Semiconductor Corporation 

P4C187/187L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol Parameter

Dynamic

ICC

Operating

Current*

Temperature

Range

Commercial

Industrial

Military

–10 –12 –15 –20 –25 –35 –45 –55 –70 –85 Unit

180 170 160 155 150 N/A N/A N/A N/A N/A mA

N/A 180 170 160 155 150 N/A N/A N/A N/A mA

N/A N/A 170 160 155 150 145 145 145 145 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL.

DATA RETENTION CHARACTERISTICS (P4C187L Military Temperature Only)

Symbol

Parameter

VDR

VCC for Data Retention

Test Conditons

Typ.*

Max

Min

VCC =

VCC =

2.0V 3.0V 2.0V 3.0V

2.0

ICCDR Data Retention Current

tCDR

Chip Deselect to

Data Retention Time

tR†

Operation Recovery Time

*TA = +25°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

CE ≥ VCC –0.2V,

VIN ≥ VCC –0.2V

or VIN ≤ 0.2V

10

0

tRC§

15 600 900

Unit

V

µA

ns

ns

DATA RETENTION WAVEFORM

Document # SRAM111 REV B

Page 3 of 12

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