BDX67B 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BDX67B

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

, Line.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

BDX67/A/B/C

DESCRIPTION

• High DC Current Gain-

: hFE=1000(Min)@lc=10A

• Low Saturation Voltage

• Complement to Type BDX66/A/B/C

APPLICATIONS

• Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25x:)

SYMBOL

PARAMETER

VALUE

UNIT

BDX67

80

BDX67A

100

VCBO Collector-Base Voltage

V

BDX67B

120

BDX67C 140

BDX67

60

BDX67A

80

VCEO Collector-Emitter Voltage

V

BDX67B

100

BDX67C

120

Veeo Emitter-Base Voltage

5

V

Ic

Collector Current-Continuous

ICM

Collector Current-Peak

16

A

20

A

IB

Base Current

Collector Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

250

mA

150

W

200

•c

Tstg

Storage Temperature Range

-65-200 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance.Junction to Case

MAX UNIT

1.17 •c/w

PIN

1.BASE

REMITTER

3. COLLECT OR (CASE)

TO-3 package

„

A.

i

IK -JU-D IPL

—U

V-

jt

r^fe

nun

DIM MIN MAX

A

3300

B 25.30 26.67

(

7.80 8.30

D 0.90 1.10

£

140 1,60

6

10.92

H

546

K 11 40 13.50

L 1675 1705

H 1940 19.62

Q

4.00 420

U 30.00 "3020"

v

4.30 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be hoth accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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