K4E151611C 데이터 시트보기 (PDF) - Samsung
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K4E151611C Datasheet PDF : 35 Pages
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K4E171611C, K4E151611C
K4E171612C, K4E151612C
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICCS
Power
Don′t care
Normal
L
Don′t care
Don′t care
Normal
L
Don′t care
L
L
Speed
-45
-50
-60
Don′t care
-45
-50
-60
-45
-50
-60
Don′t care
-45
-50
-60
Don′t care
Don′t care
K4E171612C
100
90
80
1
1
100
90
80
110
100
90
0.5
200
100
90
80
300
150
Max
K4E151612C
K4E171611C
150
100
140
90
130
80
1
2
1
1
150
100
140
90
130
80
110
110
100
100
90
90
0.5
1
200
200
150
110
140
90
130
80
200
350
150
200
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver)
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
CMOS DRAM
K4E151611C
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.
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