FDR8308P 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDR8308P

Dual P-Channel, Logic Level, PowerTrench™ MOSFET

Fairchild Semiconductor 

Typical Electrical Characteristics

20

VGS = -4.5V

-3.0V

16

-2.5V

12

8

-2.0V

4

-1.5V

0

0

1

2

3

4

5

-VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

1.6

ID = -3.2A

1.4 VGS = -4.5V

1.2

1

0.8

0.6

-50 -25

0

25

50

75 100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature.

15

VDS = -5V

12

9

TJ =-55°C

25°C

125°C

6

3

0

0.9

1.2

1.5

1.8

2.1

2.4

2.7

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.5

2 VGS = -2.0 V

1.5

-2.5V

-3.0V

-3.5V

1

-4.5V

0.5

0

5

10

15

20

- ID , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

ID = -1.6A

0.15

0.1

TA = 125o C

0.05

25°C

0

1

2

3

4

5

- VGS , GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

15

VGS= 0V

1

0.1

TJ = 125°C

25°C

-55°C

0.01

0.001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDR8308P Rev.C

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