74LVC1G386 데이터 시트보기 (PDF) - Philips Electronics
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74LVC1G386 Datasheet PDF : 15 Pages
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Philips Semiconductors
3-input EXCLUSIVE-OR gate
Product specification
74LVC1G386
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 to +85 °C
VIH
HIGH-level input voltage
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
VIL
LOW-level input voltage
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
VOL
LOW-level output voltage VI = VIH or VIL
IO = 100 µA
1.65 to 5.5
IO = 4 mA
1.65
IO = 8 mA
2.3
IO = 12 mA
2.7
IO = 24 mA
3.0
IO = 32 mA
4.5
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −100 µA
1.65 to 5.5
IO = −4 mA
1.65
IO = −8 mA
2.3
IO = −12 mA 2.7
IO = −24 mA 3.0
IO = −32 mA 4.5
ILI
input leakage current
VI = 5.5 V or GND 5.5
Ioff
power OFF leakage
VI or VO = 5.5 V 0
current
ICC
∆ICC
quiescent supply current
additional quiescent
supply current per pin
VI = VCC or GND;
IO = 0
VI = VCC − 0.6 V;
IO = 0
5.5
2.3 to 5.5
MIN.
0.65 × VCC
1.7
2.0
0.7 × VCC
−
−
−
−
−
−
−
−
−
−
VCC − 0.1
1.2
1.9
2.2
2.3
3.8
−
−
−
−
TYP.(1)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
±0.1
±0.1
0.1
5
MAX. UNIT
−
V
−
V
−
V
−
V
0.35 × VCC V
0.7
V
0.8
V
0.3 × VCC V
0.1
V
0.45
V
0.3
V
0.4
V
0.55
V
0.55
V
−
V
−
V
−
V
−
V
−
V
−
V
±5
µA
±10
µA
10
µA
500
µA
2003 Nov 04
7
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