TCET1100(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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TCET1100
(Rev.:1999)

Optocoupler with Phototransistor Output

Vishay Semiconductors 

TCET110.(G) up to TCET4100

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Output (Detector)

Test Conditions

Symbol

Value

Unit

Isi

130

mA

Parameters

Power dissipation

Coupler

Test Conditions

Symbol

Value

Unit

Tamb ≤ 25°C

Psi

265

mW

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

Value

Unit

VIOTM

8

kV

Tsi

150

°C

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol Min. Typ. Max. Unit

Partial discharge test voltage – 100%, ttest = 1 s

Vpd

1.6

kV

Routine test

Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM

8

kV

Lot test (sample test)

Insulation resistance

(see figure 2)

VIO = 500 V

VIO = 500 V,

Vpd

1.3

RIO

1012

RIO

1011

kV

W

W

Tamb = 100°C

VIO = 500 V,

RIO

109

W

Tamb = 150°C

(construction test only)

300

250

Phototransistor

Psi ( mW )

200

150

100

VIOTM

VPd

VIOWM

VIORM

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

50

0

0

94 9182

IR-Diode

Isi ( mA )

25 50 75 100 125 150

Tsi – Safety Temperature ( °C )

0

13930

t1

tTr = 60 s

t3 ttest t4

t2 tstres

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Document Number 83503

Rev. A6, 08–Sep–99

www.vishay.de • FaxBack +1-408-970-5600

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