TC74ACT273P 데이터 시트보기 (PDF) - Toshiba

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TC74ACT273P

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC74ACT273P/F/FW

Absolute Maximum Ratings (Note 1)

Characteristics

Symbol

Rating

Unit

Supply voltage range

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

DC VCC/ground current

Power dissipation

Storage temperature

VCC

VIN

VOUT

IIK

IOK

IOUT

ICC

PD

Tstg

−0.5 to 7.0

V

−0.5 to VCC + 0.5

V

−0.5 to VCC + 0.5

V

±20

mA

±50

mA

±50

mA

±200

mA

500 (DIP) (Note 2)/180 (SOP)

mW

−65 to 150

°C

Note1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Note2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be

applied up to 300 mW.

Recommended Operating Conditions (Note)

Characteristics

Supply voltage

Input voltage

Output voltage

Operating temperature

Input rise and fall time

Symbol

VCC

VIN

VOUT

Topr

dt/dV

Rating

4.5 to 5.5

0 to VCC

0 to VCC

−40 to 85

0 to 10

Unit

V

V

V

°C

ns/V

Note: The recommended operating conditions are required to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

3

2006-06-01

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