74HC125 데이터 시트보기 (PDF) - ON Semiconductor
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74HC125 Datasheet PDF : 8 Pages
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74HC125
PIN ASSIGNMENT
OE1 1
A1 2
Y1 3
OE2 4
A2 5
Y2 6
GND 7
14 VCC
13 OE4
12 A4
11 Y4
10 OE3
9 A3
8 Y3
FUNCTION TABLE
HC125
Inputs Output
A OE Y
HL
H
LL
L
XH
Z
LOGIC DIAGRAM
HC125
Active−Low Output Enables
A1
2
3
Y1
OE1
1
5
A2
6
Y2
OE2
4
9
A3
8 Y3
OE3
10
12
A4
11
Y4
13
OE4
PIN 14 = VCC
PIN 7 = GND
ÎÎMÎÎAXÎÎIMUÎÎMRÎÎATÎÎINGÎÎS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
Vin DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
V
– 0.5 to VCC + 0.5 V
Vout DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5 V
Iin
DC Input Current, per Pin
±20
mA
Iout DC Output Current, per Pin
±35
mA
ICC DC Supply Current, VCC and GND Pins
±75
mA
PD Power Dissipation in Still Air
SOIC Package†
500
mW
TSSOP Package†
450
Tstg Storage Temperature
– 65 to + 150
_C
TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
(SOIC or TSSOP Package)
260
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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