Q68000-A8397 데이터 시트보기 (PDF) - Infineon Technologies

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Q68000-A8397

PNP Silicon Switching Transistor

Infineon Technologies 

SXT 3906

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector-base cutoff current

VCB = 30 V

Collector-emitter cutoff current

VCE = 30 V, VBE = – 3 V

DC current gain

IC = 100 µA, VCE = 1 V

IC = 1 mA, VCE = 1 V

IC = 10 mA, VCE = 1 V

IC = 50 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

Base-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 40

–

V(BR)CB0 40

–

V(BR)EB0 5

–

ICB0

–

–

ICEV

–

–

hFE

VCEsat

VBEsat

60

–

80

–

100 –

60

–

30

–

–

–

–

–

0.65 –

–

–

–

V

–

–

50 nA

50

–

–

–

300

–

–

V

0.25

0.4

0.85

0.95

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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