BB620 데이터 시트보기 (PDF) - Infineon Technologies

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BB620

Silicon Variable Capacitance Diode

Infineon Technologies 

BB 620

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Reverse current

IR

VR = 30 V

VR = 30 V, TA = 85 ˚C

Diode capacitance

CT

f = 1 MHz

VR = 1 V

VR = 28 V

Capacitance ratio

CT1

VR = 1 V, 28 V; f = 1 MHz

CT28

Capacitance matching

∆CT

VR = 1 V … 28 V, f = 1 MHz

CT

Series resistance

rS

CT = 30 pF; f = 100 MHz

Series inductance

LS

min.

–

–

62

2.9

19.5

–

–

–

Values

Unit

typ.

max.

nA

–

10

–

200

pF

–

76

–

3.4

–

25

–

–

2.5

%

1.3

–

Ω

2.8

–

nH

Diode capacitance CT = f (VR)

f = 1 MHz

Semiconductor Group

2

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