FQB2N80 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQB2N80 Datasheet PDF : 9 Pages
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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
V = 20V
GS
6
4
※ Note : T = 25℃
J
2
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
VDS = 640V
8
6
4
2
※ Note : ID = 2.4A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
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