BC869 데이터 시트보기 (PDF) - TY Semiconductor

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BC869

PNP Medium Power Transistor

TY Semiconductor 

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

BC868

BC868-16

BC869-25

Collector-emitter saturation voltage

Base to emitter voltage

Collector capacitance

Transition frequency

Product specification

BC869

Symbol

Testconditons

ICBO

VCB = -25 V, IE = 0

VCB = -25 V, IE = 0; Tj = 25

IEBO VEB = -5 V, IC = 0

IC = -5 mA; VCE = -10 V

hFE IC = -500 mA; VCE = -1 V

IC = -1 A; VCE = -1 V

hFE IC = -500 mA; VCE = -1 V

hFE IC = -500 mA; VCE = -1 V

VCE(sat) IC = -1 A; IB = -100 mA

IC = -5 mA; VCE = -10 V

VBE

IC = -1 A; VCE = -1 V

CC IE = Ie = 0; VCB = -10 V; f = 1 MHz

fT

IC = -50 mA; VCE = -5 V; f = 100 MHz

Min Typ Max Unit

-100 nA

-10 ìA

-100 nA

50

85

375

60

100

250

160

375

-500 mV

-700 mV

-1

V

28

pF

40 140

MHz

hFE Classification

TYPE

Marking

BC869

CEC

BC869-16

CGC

BC869-25

CHC

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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