2SC4591 데이터 시트보기 (PDF) - Renesas Electronics

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2SC4591

Silicon NPN Epitaxial

Renesas Electronics 

2SC4591

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25°C)

Symbol Min Typ Max Unit

Test conditions

V(BR)CBO

15

—

—

V IC = 10 µA, IE = 0

ICBO

—

—

1

µA VCB = 12 V, IE = 0

ICEO

—

—

1

mA VCE = 9 V, RBE = ∞

IEBO

—

—

10

µA VEB = 1.5 V, IC = 0

hFE

40

120 250

— VCE = 5 V, IC = 20 mA

Cob

—

0.8

1.5

pF VCB = 5 V, IE = 0,

f = 1MHz

fT

6.5

9.0

— GHz VCE = 5 V, IC = 20 mA

PG

9.5 12.5 —

dB VCE = 5 V, IC = 20 mA,

f = 900 MHz

NF

—

1.2

2.5

dB VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.3.00 Aug 10, 2005 page 2 of 4

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