TPR175 데이터 시트보기 (PDF) - New Jersey Semiconductor
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TPR175 Datasheet PDF : 1 Pages
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J.£.ii£,u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Dnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TPR175
175 Watts, 50 Volts, Pulsed
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The TPR 175 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C2
388 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
12.5 Amps
• 6 5 t o + 150°C
+ 200°C
CASE OUTLINE
55CX, STYLE 1
ELECTRICAL CHARACTERISTICS (g> 25 °C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
Tic
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090MHz
Vcc = 50 Volts
PW= 10|asec
DF= 1%
F = 1090MHz
MIN
175
8.0
TYP
9.0
40
MAX UNITS
Watts
25
Watts
dB
%
00:1
BVebo
BVces
"FE
Ojc2
Emitter to Base Breakdown
le = 5 mA
3.5
Collector to Emitter Breakdown Ic = 20 mA
55
DC - Current Gain
Ic = 20 mA, Vce = 5V 10
Thermal Resistance
Volts
Volts
0.45 °c/w
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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