2SJ530 데이터 시트보기 (PDF) - Renesas Electronics
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2SJ530 Datasheet PDF : 9 Pages
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2SJ530(L), 2SJ530(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–20
–10 V
–4 V
–16
–6 V
Pulse Test
–5 V
–3.5 V
–12
–8
–3 V
–4
VGS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
Pulse Test
–3.2
–2.4
–1.6
ID = –15 A
–10 A
–0.8
–5 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 07, 2005 page 3 of 8
Maximum Safe Operation Area
–1000
–300
–100
Operation in
this area is
limited by RDS (on)
10 µs
–30
–10
–3
–1
–0.3
Ta = 25°C
–0.1
–0.1 –0.3 –1
DC POWpe=ra1tio0nm(Tsc1(11=m0s20hs5o°µtC)s)
–3 –10 –30
–100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–20
VDS = –10 V
Pulse Test
–16
–12
–8
–4
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
Pulse Test
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
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