STTH15R06D(2002) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH15R06D Datasheet PDF : 6 Pages
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STTH15R06D/FP
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
800
700
VR=400V
Tj=125°C
600
500
400
300
200
100
0
0
200
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
400
600
800
1000
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
0.35
IF=IF(av)
VR=400V
Tj=125°C
0.30
0.25
0.20
0.15
0.10
0
dIF/dt(A/µs)
200
400
600
800
1000
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
IRM
Qrr
50
Tj(°C)
75
IF=IF(av)
VR=400V
Tj=125°C
VFP(V)
12
11
IF=IF(av)
Tj=125°C
10
9
8
7
6
5
4
3
2
Reference: Tj=125°C
1
dIF/dt(A/µs)
100
125
0
0
100
200
300
400
500
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
100
dIF/dt(A/µs)
200
300
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
400
500
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
1000
F=1MHz
Vosc =30mV
Tj=25°C
100
10
1
VR(V)
10
100
1000
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