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FS10AS-2 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS10AS-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
100
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
0.16 0.23
Ω
—
0.80 1.15
V
—
9.0
—
S
—
600
—
pF
—
125
—
pF
—
40
—
pF
—
18
—
ns
—
20
—
ns
—
30
—
ns
—
18
—
ns
—
1.0
1.5
V
—
—
4.17 °C/W
—
100
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
PD = 30W
TC = 25°C
Pulse Test
VGS = 20V 10V
7V
16
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 10ms
101
7
5
3
100ms
2
100
1ms
7
5
10ms
3
DC
2
10–1
7
5 TC = 25°C
3 Single Pulse
2
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
Pulse Test
VGS = 20V 10V 7V
6V
8
12
6V
8
4
5V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
6
4
5V
2
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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