UTRON
Preliminary Rev. 0.1
UT62L1024(I)
128K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS (VCC = 2.5V~3.6V, TA = -40℃~+85℃ )
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current IIL
Output Leakage Current IOL
VSS ≦VIN ≦VCC
VSS ≦VI/O≦VCC
CE 1 =VIH or CE2 = VIL or
OE = VIH or WE = VIL
Output High Voltage
VOH
Output Low Voltage
VOL
ICC
Average Operating
Power Supply Courrent
ICC1
IOH = - 1mA
IOL= 2.1mA
Cycle time = Min.,100% Duty, 55
CE 1 =VIL, CE2 = VIH,II/O=0mA
70
Cycle time = 1µs, 100% Duty,
. CE 1 ≦0.2V,CE2≧VCC-0.2V, II/O = 0mA
ISB
CE 1 =VIH or CE2 = VIL
Standby Power
Supply Current
CE 1 ≧VCC-0.2V - L TA = -40℃~+85℃
ISB1
or .CE2≦0.2V
TA=+50℃
- TA = -40℃~+85℃
LL
TA=+50℃
MIN.
2.0
- 0.5
-1
-1
2.0
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
30
20
-
-
-
-
-
-
MAX.
VCC+0.5
0.6
1
1
-
0.4
40
30
5
1.0
50
10
10
3
UNIT
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN
-
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
MAX.
6
8
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.4V to 2.2V
5ns
1.5V
CL=30pF, IOH/IOL=-1mA/2.1mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
P80078