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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

74VHCU04TTR 데이터 시트보기 (PDF) - STMicroelectronics

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74VHCU04TTR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
74VHCU04TTR Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
74VHCU04
Table 6: DC Specifications
Test Condition
Value
Symbol Parameter
VCC
(V)
VIH High Level Input 2.0
Voltage
3.0 to
5.5
VIL Low Level Input 2.0
Voltage
3.0 to
5.5
VOH High Level
2.0
Output Voltage
3.0
4.5
3.0
4.5
VOL Low Level Output 2.0
Voltage
3.0
4.5
3.0
4.5
II Input Leakage
0 to
Current
5.5
ICC
Quiescent Supply
Current
5.5
IO=-50 µA
IO=-50 µA
IO=-50 µA
IO=-4 mA
IO=-8 mA
IO=50 µA
IO=50 µA
IO=50 µA
IO=4 mA
IO=8 mA
VI = 5.5V or GND
VI = VCC or GND
TA = 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
1.7
1.7
1.7
0.8VCC
1.8 2.0
2.7 3.0
4.0 4.5
2.58
3.94
0.0
0.0
0.0
0.8VCC
0.8VCC
0.3
0.2
0.2
0.2
VCC
VCC
VCC
1.8
1.8
2.7
2.7
4.0
4.0
2.48
2.48
3.8
3.8
0.2
0.2
0.2
0.3
0.3
0.3
0.5
0.5
0.5
0.36
0.44
0.44
0.36
0.44
0.44
± 0.1
± 1.0
± 1.0
2
20
20
Unit
V
V
V
V
µA
µA
Table 7: AC Electrical Characteristics (Input tr = tf = 3ns)
Test Condition
Symbol
Parameter
VCC CL
(V) (pF)
tPLH Propagation Delay 3.3(*) 15
tPHL Time
3.3(*) 50
5.0(**) 15
5.0(**) 50
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Table 8: Capacitive Characteristics
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5.0 8.9 1.0 10.5 1.0 10.5
ns
7.5 11.4 1.0 13.0 1.0 13.0
3.5 5.5 1.0 6.5 1.0 6.5
ns
5.0 7.0 1.0 8.0 1.0 8.0
Symbol
Parameter
CIN Input Capacitance
CPD Power Dissipation
Capacitance
(note 1)
Test Condition
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5 10
10
10 pF
13
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)
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