IRF634 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF634 Datasheet PDF : 2 Pages
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N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS (TC=25°C)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VoS(TH) Gate Threshold Voltage
VDS= VGS; b= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.1A
loss
Gate Source Leakage Current
VGS= ±20V;VDs=0
loss
Zero Gate Voltage Drain Current
VDS= 250V; VGS= 0
VSD
Diode Forward Voltage
lF=8.1A;VGs=0
IRF634
MIN MAX UNIT
250
V
2
4
V
0.45
0
±100 nA
25
uA
2.0
V
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