IRF634 데이터 시트보기 (PDF) - Inchange Semiconductor

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IRF634

N-channel mosfet transistor

Inchange Semiconductor 

MOSFET

IRF634

N-channel mosfet transistor

INCHANGE

‹ Features

·With TO-220 package

·Simple drive requirements

·Fast switching

·VDSS=250V; RDS(ON)≤0.45Ω;ID=8.1A

·1.gate 2.drain 3.source

‹ Absolute Maximum Ratings Tc=25℃

SYMBOL

PARAMETER

VDSS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

ID

Drain Current-continuous@ TC=25℃

Ptot

Total Dissipation@TC=25℃

Tj

Max. Operating Junction temperature

Tstg

Storage temperature

RATING

250

±20

8.1

74

150

-65~150

UNIT

V

V

A

W

℃

℃

‹ Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA

VGS(TH) Gate threshold voltage

VDS= VGS; ID=0.25mA

RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.1A

IGSS Gate source leakage current

VGS=±20V;VDS=0

IDSS Zero gate voltage drain current VDS=250V; VGS=0

VSD Diode forward voltage

IF=8.1A; VGS=0

123

TO-220

MIN MAX UNIT

250

V

2

4

V

450 mΩ

±100 nA

25

uA

2.0

V

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