2N4921G 데이터 시트보기 (PDF) - ON Semiconductor
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2N4921G Datasheet PDF : 6 Pages
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2N4921G, 2N4922G, 2N4923G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N4921G
2N4922G
2N4923G
VCEO(sus)
40
60
80
Vdc
−
−
−
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921G
(VCE = 30 Vdc, IB = 0)
2N4922G
(VCE = 40 Vdc, IB = 0)
2N4923G
ICEO
−
−
−
mAdc
0.5
0.5
0.5
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ICEX
−
−
ICBO
−
IEBO
−
mAdc
0.1
0.5
mAdc
0.1
mAdc
1.0
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
hFE
40
30
10
VCE(sat)
−
VBE(sat)
−
−
−
150
−
Vdc
0.6
Vdc
1.3
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
1.3
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
MHz
3.0
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
pF
−
100
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
25
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
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