IRF610 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

일치하는 목록

IRF610

N-Channel Mosfet Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

IRF610

·FEATURES

·Low RDS(on)

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speed

·Rugged

·Low Drive Requirements

·DESCRITION

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

200

V

±20

V

ID

Drain Current-Continuous

3.3

A

IDM

Drain Current-Single Plused

8

A

PD

Total Dissipation @TC=25℃

43

W

Tj

Max. Operating Junction Temperature -55~175 ℃

Tstg

Storage Temperature

-55~175 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

2.9

℃/W

Rth j-a Thermal Resistance,Junction to Ambient

80

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

PDF pdfFactory Pro

www.fineprint.cn

Share Link: