IRF610 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF610 Datasheet PDF : 3 Pages
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IRF610-613
MTP2N18/2N20
Electrical Characteristics (Tc - 25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage1
IRF610/612/MTP2N20
MTP2N18
IRF611/613
IDSS
Zero Gate Voltage Drain Current
Mln
200
180
150
Max
250
1000
IGSS
Gate-Body Leakage Current
±500
On Characteristics
VQS(th)
Gate Threshold Voltage
IRF610-613
2.0
4.0
MTP2N18/20
2.0
4.5
RDSIOH) Static Drain-Source On-Resistance2
IRF61 0/611
1.5
IRF612/613
2.4
MTP2N18/20
1.8
VDS(on) Drain-Source On-Voltage2
4.4
MTP2N18/2N20
3.6
grs
Forward Transconductance
0.8
Dynamic Characteristics
Qss
Input Capacitance
200
coas
Output Capacitance
80
Crss
Reverse Transfer Capacitance
25
Switching Characteristics
25''C, Figures 11, 12}3
td(on)
Turn-On Delay Time
15
t,
Rise Time
25
tdfoH)
Turn-Off Delay Time
15
t|
Fall Time
15
Q9
Total Gate Charge
7.5
Unit
Test Conditions
V
VGS = 0 V, ID - 250 pA
MA
VDS - Rated VDSs. VQS = 0 V
MA
VDS = 0.8 x Rated VDSs.
VGS = 0 V, TC = 125°C
nA
VQS = ± 20 V, VDS = 0 V
V
ID - 250 MA. VDS • VGS
ID = 1 mA, VDS - VGS
n
VQS =10 V, ID =1.25 A
ID -1.0 A
V
V
S (U)
VGS =10 V; I0 = 2.0 A
VQS -10 V; ID -1.0 A;
TC-100°C
VDS = 10 V. ID =1.25 A
PF
VDS = 25 V, VGS - 0 V
f-1.0 MHz
pF
PF
ns
VDD = 50 V, ID = 1.25 A
ns
VGS = 10 V, RGEN = 50 ft
RQS = 50 n
ns
ns
nC
VGS= 10 V, ID = 3.0 A
VDD = 45 V
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