IRF330 데이터 시트보기 (PDF) - Intersil
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IRF330 Datasheet PDF : 7 Pages
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IRF330
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRF330
400
400
5.5
3.5
22
±20
75
0.6
300
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 10)
400
VGS(TH) VGS = VDS, ID = 250µA
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
5.5
IGSS VGS = ±20V
rDS(ON) ID = 3.0A, VGS = 10V (Figures 8, 9)
-
gfs
VDS ≥ 10V, ID = 3.3A (Figure 12)
2.9
td(ON) VDD = 200V, ID ≈ 5.5A, RG = 12Ω, RL = 36Ω,
-
tr
VGS = 10V (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
-
td(OFF) Temperature
-
tf
-
Qg(TOT) VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Qgs Essentially Independent of Operating Temperature
-
Qgd
-
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
COSS
-
CRSS
-
LD
Measured between the
Modified MOSFET
-
Contact Screw on the
Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins and Inductances
the Center of Die
D
Internal Source Inductance
LS
Measured from the Source
LD
-
Lead, 6mm (0.25in) from
the Flange and the Source
G
Bonding Pad
LS
S
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Junction to Ambient
RθJA Free Air Operation
-
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250
µA
-
-
A
±100 nA
0.8 1.0
Ω
4.0
-
S
11
17
ns
20
29
ns
35
56
ns
15
24
ns
21
35
nC
4
-
nC
17
-
nC
700
-
pF
150
-
pF
40
-
pF
5.0
-
nH
12.5
-
nH
-
1.67 oC/W
-
30 oC/W
2
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