CM200E3U-12H(1998) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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CM200E3U-12H
(Rev.:1998)
(Rev.:1998)
MITSUBISHI ELECTRIC
CM200E3U-12H Datasheet PDF : 4 Pages
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MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT
–
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi
–
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Rth(c-f)
Clamp Diode Part
–
Per Module, Thermal Grease Applied
–
Typ.
–
–
–
0.035
Max.
0.19
0.35
0.35
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
500
Tj = 25oC
400
15 14
VGE = 20V
13
300
12
200
11
10
100
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 400A
6
IC = 200A
4
2
IC = 80A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
VCE = 10V
Tj = 25°C
300
Tj = 125°C
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
101
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 100
200 300 400 500
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
102
VGE = 0V
101
Cies
Coes
100
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Sep.1998
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