MMBT4403(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

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MMBT4403
(Rev.:2005)

PNP SILICON TRANSISTOR

Unisonic Technologies 

MMBT4403

„ TYPICAL CHARACTERISTICS

DC Current Gain

vs. Collector Current

500

VCE =5V

400 125℃

300

200 25℃

100 -40℃

0

0.1 0.3 1 3 10 30 100 300

Collector Current, IC (mA)

PNP SILICON TRANSISTOR

Collector-Emitter Saturation Voltage

vs. Collector Current

0.5

β=10

0.4

25℃

0.3

0.2

125℃

0.1

-40℃

0

1

10

100

500

Collector Current, IC (mA)

Collector-Cutoff Current

vs. Ambient Temperature

100

VCB=35V

10

1

0.1

0.01

25 50 75 100 125

Ambient Temperature, TA (℃)

Input and Output

Capacitance vs. Reverse Bias Voltage

20

16

12

Cib

8

Cob

4

0

-0.1

-1

-10

-50

Reverse Bias Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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