MMBT4403 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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MMBT4403 Datasheet PDF : 4 Pages
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Typical Characteristics
-250
-200
-150
-100
-50
-0
-0
-700
β=10
Static Characteristic
-1mA
-0.9mA
-0.8mA
-0.7mA
COMMON
EMITTER
Ta=25℃
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
IB=-0.1mA
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
-300
T =100℃
a
-100
Ta=25℃
-30
1000
hFE —— IC
Ta=100℃
COMMON EMITTER
VCE=-2V
Ta=25℃
100
10
-1
-10
-100
-600
COLLECTOR CURRENT IC (mA)
-1.2
β=10
VBEsat —— IC
Ta=25℃
-0.8
Ta=100℃
-0.4
-10
-1
-3
-10
-30
-100
-600
COLLECTOR CURRENT IC (mA)
IC —— VBE
-600
COMMON EMITTER
VCE=-2V
-100
-10
Ta=100℃
Ta=25℃
-1
-0.0
-1
50
10
-3
-10
-30
-100
COLLECTOR CURRENT IC (mA)
Cob/ Cib —— VCB/ VEB
Cib
-600
f=1MHz
IE=0/IC=0
Ta=25℃
Cob
-0.1
-0.0
-0.4
-0.8
-1.2
BASE-EMMITER VOLTAGE VBE (V)
-600
VCE=-10V
Ta=25℃
fT —— IC
-100
1
-0.1
400
300
200
-1
-10
-30
REVERSE VOLTAGE V (V)
PC —— Ta
100
-10
-1
-3
-10
-30
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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