MMBT4403L(2012) 데이터 시트보기 (PDF) - ON Semiconductor

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MMBT4403L
(Rev.:2012)

Switching Transistor PNP Silicon

ON Semiconductor 

MMBT4403L, SMMBT4403L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

Collector −Base Breakdown Voltage

Emitter −Base Breakdown Voltage

Base Cutoff Current

Collector Cutoff Current

ON CHARACTERISTICS

(IC = −1.0 mAdc, IB = 0)

(IC = −0.1 mAdc, IE = 0)

(IE = −0.1 mAdc, IC = 0)

(VCE = −35 Vdc, VEB = −0.4 Vdc)

(VCE = −35 Vdc, VEB = −0.4 Vdc)

DC Current Gain

(Note 3)

(Note 3)

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −150 mAdc, VCE = −2.0 Vdc)

(IC = −500 mAdc, VCE = −2.0 Vdc)

Collector −Emitter Saturation Voltage (Note 3)

Base −Emitter Saturation Voltage (Note 3)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

Collector−Base Capacitance

Emitter−Base Capacitance

Input Impedance

Voltage Feedback Ratio

Small −Signal Current Gain

Output Admittance

SWITCHING CHARACTERISTICS

(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

(VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

Delay Time

Rise Time

(VCC = −30 Vdc, VEB = −2.0 Vdc,

IC = −150 mAdc, IB1 = −15 mAdc)

Storage Time

Fall Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol

Min

Max

Unit

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBEV

ICEX

−40

−

Vdc

−40

−

Vdc

−5.0

−

Vdc

−

−0.1 mAdc

−

−0.1 mAdc

hFE

VCE(sat)

VBE(sat)

30

−

−

60

−

100

−

100

300

20

−

Vdc

−

−0.4

−

−0.75

Vdc

−0.75 −0.95

−

−1.3

fT

200

−

MHz

Ccb

−

8.5

pF

Ceb

−

30

pF

hie

1.5

15

kW

hre

0.1

8.0 X 10− 4

hfe

60

500

−

hoe

1.0

100 mMhos

td

−

15

ns

tr

−

20

ts

−

225

ns

tf

−

30

+2 V

0

- 16 V

SWITCHING TIME EQUIVALENT TEST CIRCUIT

< 2 ns

1.0 kW

10 to 100 ms,

DUTY CYCLE = 2%

- 30 V

200 W

< 20 ns

+14 V

CS* < 10 pF

0

-16 V

1.0 kW

1.0 to 100 ms,

Scope rise time < 4.0 ns

DUTY CYCLE = 2% + 4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

- 30 V

200 W

CS* < 10 p

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

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