MMDT3946 데이터 시트보기 (PDF) - Secos Corporation.

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MMDT3946

NPN / PNP Multi-Chip Transistor

Secos Corporation. 

Elektronische Bauelemente

MMDT3946

NPN / PNP

Multi-Chip Transistor

ELECTRICAL CHARACTERISTICS OF PNP 3906 at Ta = 25°C

CHARACTERISTIC

TEST CONDITION

SYMBOL

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Output Capacitance

Transition Frequency

Noise Figure

Delay TIme

Rise Time

Storage Time

Fall Time

IC=-10μA, IE=0

IC = -1mA, IB = 0

IE=-10μA, IC=0

VCB=-30V, IE=0

VEB=-5V, IC=0

VCE=-1V, IC=-0.1mA

VCE=-1V, IC=-1mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-50mA

VCE=-1V, IC=-100mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCB=-5V, IE=0, f=1MHz

VCE=-20V, IC=-10mA, f=100MHz

VCE=-5V, IC=-0.1mA, f=1kHz

Rg=1KΩ,

VCC=-3V, VBE=-0.5V,

IC=-10mA, IB1=- IB2 = -1mA

VCC=-3V,

IC=-10mA, IB1=- IB2 = -1mA

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

hFE(4)

hFE(5)

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

Cob

fT

NF

Td

Tr

Ts

Tf

MIN.

-40

-40

-5

60

80

100

60

30

-0.65

250

MAX.

-0.05

-0.05

300

-0.25

-0.4

-0.85

-0.95

4.5

4

35

35

225

75

UNIT

V

V

V

μA

μA

V

V

V

V

pF

MHz

dB

nS

nS

nS

nS

14-Apr-2010 Rev. E

Page 3 of 5

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