2SC2999 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

부품명

상세내역

일치하는 목록

2SC2999

TO-92S Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

2SC2999 TRANSISTOR (NPN)

FEATURES

High fT and Small Cre

TO-92S

1. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

25

20

3

30

400

125

-40-125

Unit

V

V

V

mA

mW

℃

℃

2. COLLECTOR

3. BASE

12 3

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Transition frequency

Reverse Transfer Capacitance

Base-to-Collector Time Constant

Symbol Test conditions

V(BR)CBO IC=100μA, IE=0

V(BR)CEO IC=1mA, IB=0

V(BR)EBO IE=100μA,IC=0

ICBO

VCB=10V, IE=0

IEBO

VEB=3V,IC=0

hFE

VCE=6V, IC=1mA

fT

VCE=6V, IC=4mA

Cre

VCB=6V, f=1MHz

rbb’cc VCE=6V, IC=1mA,,f=31.9MHZ

Min Typ M ax U nit

25

V

20

V

3

V

0.1

μA

0.1

μA

40

200

450 750

MHz

0.6

0.9

pF

19

ps

Noise figure

NF

VCE=6V, IC=1mA,,f=100MHZ

2.2

dB

CLASSIFICATION OF hFE

Rank

Range

C

40-80

D

60-120

E

100-200

www.cj-elec.com

1

DA,Juln,2,2001164

Share Link: