2SC1623 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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2SC1623 Datasheet PDF : 4 Pages
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2SC1623
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA
● High voltage:VCEO=50V
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current
100
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=5V,IC=0
hFE
VCE=6V,IC=1mA
VCE(sat) IC=100mA,IB=10mA
VBE(sat) IC=100mA,IB=10mA
fT
VCE=6V,IC=10mA
C
B
E
Min Typ Max Unit
60
V
50
V
5
V
0.1 μA
0.1 μA
90 200 600
0.3
V
1
V
250
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
L4
90-180
L4
L5
135-270
L5
L6
200-400
L6
High Diode Semiconductor
L7
300-600
L7
1
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