B764 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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B764

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SB764

2SB764 TRANSISTOR (PNP)

TO-92MOD

D FEATURES

Power dissipation

T PCM:

0.9 W (Tamb=25℃)

.,L Collector current

ICM:

-1 A

Collector-base voltage

O V(BR)CBO:

-60 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

N Collector-base breakdown voltage

O Collector-emitter breakdown voltage

Emitter-base breakdown voltage

R Collector cut-off current

T Emitter cut-off current

C DC current gain

LE Collector-emitter saturation voltage

Base-emitter saturation voltage

E Transition frequency

J Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE sat

fT

Cob

Test conditions

Ic=-10µA, IE=0

Ic=-1mA, IB=0

IE=-10µA, IC=0

VCB=-50V, IE=0

VEB=-4V, IC=0

VCE=-2V, IC=-50mA

VCE=-2V, IC=-1A

IC=-500mA, IB=-50mA

IC=-500mA, IB=-50mA

VCE=-10V, IC=-50mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

-5

V

-1

µA

-1

µA

60

320

30

-0.7 V

-1.2 V

150

MHz

20

pF

WECLASSIFICATION OF hFE(1)

Rank

D

E

F

Range

60-120

100-200

160-320

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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