2SA1964 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA1964

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1964

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μ A; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -50μ A; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

ICBO

Collector Cutoff Current

VCB= -160V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -0.2A; VCE= -10V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

MIN TYP. MAX UNIT

-160

V

-160

V

-5

V

-1.0

V

-1.0 μ A

-1.0 μ A

60

200

150

MHz

35

pF

 hFE Classifications

D

E

60-120 100-200

isc website：www.iscsemi.cn

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