2SC2655 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2655 Datasheet PDF : 2 Pages
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isc Silicon NPN Pow Transistor
INCHANGE Semiconductor
2SC2655
DESCRIPTION
·Silicon NPN epitaxial type
·Low saturation voltage
·Complementary to 2SA1020
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
2
A
0.9
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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