FGH40N60SMD 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGH40N60SMD Datasheet PDF : 10 Pages
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April 2013
FGH40N60SMD
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching: EOFF = 6.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are
essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
20
80
40
120
40
20
120
349
174
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2010 Fairchild Semiconductor Corporation
1
FGH40N60SMD Rev. C0
www.fairchildsemi.com
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