BD678 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD678 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darligton Power Transistors
Product Specification
BD676/BD678/BD680
DESCRIPTION
·
·With TO-126 package
·Complement to type BD675/BD677/BD679
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
BD676
VCBO
Collector-base voltage BD678
BD680
BD676
VCEO
Collector-emitter voltage BD678
BD680
VEBO
Emitter -base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-45
-60
-80
-45
-60
-80
-5
-4
-0.1
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
3.13
UNIT
℃/W
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